Find many great new & used options and get the best deals for 20N60C3 Manu Infineon Encapsulation To-3p 600v N-channel MOSFET at the best online prices at eBay! Free shipping for many products! 20N60C3 20N60C3 20N60C3 Type Package Ordering Code SPP20N60C3 P-TO220-3-1 Q67040-S4398 SPB20N60C3 P-TO263-3-2 Q67040-S4397 SPA20N60C3 P-TO220-3-31 Q67040-S4410 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 20.7 13.1 20.71) 13.11) A Pulsed drain current, tp limited by Tjmax ID puls 62.1 62.1 A.
SPI20N60C3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SPI20N60C3
Маркировка: 20N60C3
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 208 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.9 V
Максимально допустимый постоянный ток стока |Id|: 20.7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 87 nC
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 780 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.19 Ohm
Тип корпуса: TO262
SPI20N60C3 Datasheet (PDF)
0.1. spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf Size:683K _infineon
SPP20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transco
0.2. spp20n60c3 spi20n60c3 spa20n60c3.pdf Size:1832K _infineon
SPP20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transco
0.3. spi20n60c3.pdf Size:215K _inchange_semiconductor
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPI20N60C3FEATURESWith TO-262(I2PAK) packageLow input capacitance and gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2
Другие MOSFET... SPI11N60CFD, SPI11N60S5, SPI11N65C3, SPI12N50C3, SPI15N60C3, SPI15N60CFD, SPI15N65C3, SPI16N50C3, IRF510, SPI20N60CFD, SPI20N65C3, SPI21N50C3, SPP02N60C3, SPP02N60S5, SPP02N80C3, SPP03N60C3, SPP03N60S5.
Список транзисторов
Обновления
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02This is one of the MOSFET types. This is a kind of the transistor.
Part Number : 20N60C3, SPP20N60C3
Description : Cool MOS Power Transistor
Package : PG-TO220FP, PG-TO262, PG-TO220
Manufactures : Infineon Technologies
See the preview image and the PDF file for more information.
Image
Description :
650V, 20.7A, 0.19 Ohme, MOS Power Transistor.
20N60C3 Pinout
Features
1. New revolutionary high voltage technology
2. Worldwide best RDS(on)in TO 220
3. Ultra low gate charge
4. Periodic avalanche rated
5. Extreme dv/dt rated
6. High peak current capability
7. Improved transconductance
8. Pb-free lead plating; RoHS compliant
9. Qualified according to JEDEC for target applications
Marking Information
20n60c3 Mosfet In India
Applications
1. Server
2. Telecom
3. Consumer
4. PC power
5. Adapter
20N60C3 Datasheet
20n60c3 Mosfet Datasheet Pdf
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